- Introduction
The project is focused on a detailed study of reversible crystallization processes as well as the structural
relaxation in phase change materials that are used for rewriteable optical or RAM data storage media.
Selected compositions of chalcogenide amorphous materials in Ge-Sb-Te and Ge-Sb-Se systems will be
prepared. Crystallization processes will be studied by using thermal analysis and various microscopy
techniques in combination with some novel methods. A systematic study of thermodynamic properties and
viscosity behavior of these compositions will be performed as an integral part of this project. The
experimental and theoretical study of structural relaxation in phase change materials is proposed. It will be
monitored by volume, enthalpy or entropy change as a function of long term annealing at selected
temperatures in the glass transition range. Such a combined approach is useful for searching new
materials with tailored properties as well as to better control the reversible crystallization process and to
predict the long term stability of amorphous phase. Both aspects are essential for further development of
phase change memory devices.
relaxation in phase change materials that are used for rewriteable optical or RAM data storage media.
Selected compositions of chalcogenide amorphous materials in Ge-Sb-Te and Ge-Sb-Se systems will be
prepared. Crystallization processes will be studied by using thermal analysis and various microscopy
techniques in combination with some novel methods. A systematic study of thermodynamic properties and
viscosity behavior of these compositions will be performed as an integral part of this project. The
experimental and theoretical study of structural relaxation in phase change materials is proposed. It will be
monitored by volume, enthalpy or entropy change as a function of long term annealing at selected
temperatures in the glass transition range. Such a combined approach is useful for searching new
materials with tailored properties as well as to better control the reversible crystallization process and to
predict the long term stability of amorphous phase. Both aspects are essential for further development of
phase change memory devices.
